MT45W4MW16BFB-856 WT F TR 数据手册
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Features
Async/Page/Burst CellularRAMTM 1.0 Memory
MT45W4MW16B*
*Note: Not recommended for new designs.
For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/
Features
Figure 1:
• Single device supports asynchronous, page, and
burst operations
• Random access time: 70ns
• VCC, VCCQ voltages
1.70V–1.95V VCC
1.70V–3.30V VCCQ
• Page mode read access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
• Burst mode write access
Continuous burst
• Burst mode read access
4, 8, or 16 words, or continuous burst
MAX clock rate: 80 MHz (tCLK = 12.5ns)
Burst initial latency: 50ns (4 clocks) @ 80 MHz
t
ACLK: 9ns @ 80 MHz
• Low power consumption
Asynchronous READ:
MT45W4MW16BFB-856 WT F TR 价格&库存
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